1 aos semiconductor product reliability report AOTF4185 , rev b plastic encapsulated device alpha & omega semiconductor, inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AOTF4185. accelerated environmental tests are performed on a specific sam ple size, and then followed by electrical test at end point. review of final electrical test resul t confirms that AOTF4185 passes aos quality and reliability requirements. the released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. table of contents: i. product description ii. package and die information iii. environmental stress test summary and result iv. reliability evaluation i. product description: the AOTF4185 combines advanced trench mosfet techno logy with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. -rohs compliant details refer to the datasheet. ii. die / package information: AOTF4185 process standard sub-micron low voltage p channel process package type 3 leads to220fl lead frame bare cu die attach soft solder bond wire al & au wire mold material epoxy resin with silica filler moisture level up to level 1 * note * based on info provided by assembler and mold compo und supplier
3 iii. result of reliability stress for AOTF4185 note a: the reliability data presents total of available g eneric data up to the published date. iv. reliability evaluation fit rate (per billion): 46 mttf = 2478 years the presentation of fit rate for the individual pro duct reliability is restricted by the actual burn-i n sample size of the selected product (AOTF4185). fai lure rate determination is based on jedec standard jesd 85. fit means one failure per billion hours. failure rate = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 1.83 x 10 9 / [ 2x2x77x500x258 ] = 46 mttf = 10 9 / fit = 2.17 x 10 7 hrs = 2478 years chi2 = chi squared distribution, determined by the numbe r of failures and confidence interval n = total number of units from htrb and htgb tests h = duration of htrb/htgb testing af = acceleration factor from test to use conditions ( ea = 0.7ev and tuse = 55c) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s)] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 130 deg c 150 deg c af 258 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltzmanns constant, 8.617164 x 10 -5 ev / k test item test condition time point lot attribution total sample size number of failures reference standard msl precondition 168hr 85 c /85%rh +3 cycle reflow@250 c - 11 lots 1815 pcs 0 jesd22 - a113 htgb temp = 150 c , vgs=100% of vgsmax 168 hrs 500 hrs 1000 hrs 1 lot (note a*) 7 7 pcs 77 pcs / lot 0 jesd22 - a108 htrb temp = 150 c , vds=80% of vdsmax 168 hrs 500 hrs 1000 hrs 1 lot (note a*) 7 7 pcs 77 pcs / lot 0 jesd22 - a108 hast 130 +/- 2 c , 85%rh, 33.3 psi, vgs = 80% of vgs max 100 hrs 5 lots (note a*) 275 pcs 55 pcs / lot 0 jesd22 - a110 pressure pot 121 c , 29.7psi, rh=100% 96 hrs 11 lots (note a*) 847 pcs 77 pcs / lot 0 jesd22 - a102 temperature cycle -65 c to 150 c , air to air, 250 / 500 cycles 9 lots (note a*) 693 pcs 77 pcs / lot 0 jesd22 - a104
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